전형절차 ㆍ서류전형 > 1차면접 > 2차면접 > 임원면접 > 최종합격 ㆍ면접일정은 추후 통보됩니다. |
전력용반도체 기업
Senior IGBT(트랜지스터)
Development Engineer (대리~부장급) 채용
포지션 및 자격요건 |
포지션 . Senior IGBT(트랜지스터) Development Engineer (대리 ~ 부장급)
* 부천 근무
업무 내용)
· Experienced IGBT engineer responsible for developing new IGBT technology.
· Design new IGBT devices based on simulation.
· Analyze IGBT technology and trends.
· Create new IGBT device concepts and realize next-generation IGBTs.
· Conduct basic research and feasibility studies for next-generation devices.
· Provide technical support for production issues.
· Meet product demands from the business unit.
· Collaborate closely with IGBT engineers in Korea and around the world.
· Work closely with foundry partners (e.g., UPD and PA teams) and the business unit.
지원자격)
· Bachelor's degree in electrical/electronic engineering, material science, or a related field (Master's degree preferred).
· Over 5 years of experience in device development.
· Strong understanding of semiconductor fabrication processes and device physics.
· Familiarity with device/process simulation software.
· Knowledge of power electronics.
· 업무상 영어 가능자(이메일 및 Concall 있음)
전형절차 ㆍ서류전형 > 1차면접 > 2차면접 > 임원면접 > 최종합격 ㆍ면접일정은 추후 통보됩니다. |
유의사항 ㆍ허위사실이 발견될 경우 채용이 취소될 수 있습니다. |